Wolfspeed, a Cree Company and a provider in silicon carbide (SiC) power products, has introduced a 1,000 V MOSFET that enables a reduction in overall system cost, while improving system efficiency and decreasing system size. The new MOSFET, specially optimized for fast charging and industrial power supplies, enables a 30 percent reduction in component count while achieving more than 3-times increase in power density and a 33 percent increase in output power.
“Supporting the widespread implementation of off-board charging stations, Wolfspeed’s technology enables smaller, more efficient charging systems that provide higher power charging at lower overall cost. This market requires high efficiency and wide output voltage range to address the various electric vehicle battery voltages being introduced by automotive suppliers,” explained John Palmour, CTO of Wolfspeed.
“Wolfspeed’s new 1,000 V SiC MOSFET offers system designers ultra-fast switching speeds with a fraction of a silicon MOSFET’s switching losses. The figure-of-merit delivered by this device is beyond the reach of any competing silicon-based MOSFET,” Palmour added.
Designers can reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the 1000 Vds rating of the SiC MOSFET. The increase in output power in a reduced footprint is realized by the ultra-low output capacitance, as low as 60pF, which significantly lowers switching losses. This device enables operations at higher switching frequencies, which shrinks the size of the resonant tank elements and decreases overall losses, thus reducing heatsink requirements. Wolfspeed has determined these proof-points by constructing a 20 kW full-bridge resonant LLC converter and comparing it to a market-leading 15kW silicon system.
Wolfspeed offers a 20kW full-bridge resonant LLC converter reference design, listed as part number CRD-20DD09P-2. This fully assembled hardware set allows designers to quickly evaluate the new 1,000 V SiC MOSFET and demonstrate its faster switching capability, as well as the increased system power density the device enables.
The 1,000 V, 65 mOhm MOSFET is available in a through-hole, 4L-TO247 package, is listed as part number C3M0065100K, and is currently available for purchase at Digikey, Mouser, and Richardson RFPD. Wolfspeed plans to release another 1,000 V MOSFET in a 4L-TO247 package at 120 mOhm (C3M0120100K) in the coming weeks. This package has a Kelvin-source connection that allows engineers to create designs that maximize the benefits of SiC’s superior speed and efficiency.
The surface mount versions of these devices, C3M0065100J and C3M0120100J, will be released later this year. Like the 4L-TO247, the surface mount devices include a Kelvin-source pin to help minimize gate ringing and reduce system losses.