Vishay Intertechnology, Inc. has introduced a TrenchFET 20 V n-channel MOSFET designed to save space, decrease power consumption and extend battery usage in wearable devices, smartphones, tablets and solid-state drives. Offered in a chipscale MICRO FOOT package with a 0.54 mm maximum height, the Vishay Siliconix Si8410DB provides a low on-resistance for a 20 V device in a 1 mm square footprint.
Optimized for use as a load switch, small-signal switch, and high-speed switch in power management applications, the Si8410DB features low on-resistance of 37 mΩ at 4.5 V, 41 mΩ at 2.5 V, 47 mΩ at 1.8 V, and 68 mΩ at 1.5 V. Compared with the closest competing devices in the CSP 1 mm square package, these ratings represent an improvement of 26 percent at 4.5 V, 32 percent at 2.5 V, 35 percent at 1.8 V, and 27 percent at 1.5 V. Compared with devices in the DFN 1 mm square package, on-resistance is 32 percent lower at 4.5 V, 40 percent lower at 2.5 V, 48 percent lower at 1.8 V, and 43 percent lower at 1.5 V. The device’s low on-resistance, ratings down to 1.5 V, and ± 8 V VGS provide a combination of safety margin, gate drive design flexibility and high performance for lithium ion battery-powered applications.
The Si8410DB offers a low on-resistance per area of 30 mΩ-mm square, 28 percent lower than the closest competing 20 V MOSFET in a 1 mm square plastic package, to save space and reduce battery power consumption in mobile applications. The device’s low on-resistance means a very low voltage drop at DC and pulse peak currents, so less power is wasted as heat. The combination of lower on-resistance and lower thermal resistance results in up to 45 percent and 144 percent lower temperature rise than the next-best devices in CSP and 1 mm square packages, respectively.
Samples and production quantities of the Si8410DB are available now, with lead times of 13 weeks for larger orders.
